Roundhill Memory ETF (DRAM) is the market's first-ever pure-play memory ETF, offering precise exposure to global semiconductor companies producing HBM, NAND, and DRAM, which act as the critical bottleneck of the AI revolution.

Instead of broad semiconductor exposure, DRAM utilizes a targeted basket of direct equities and total return swaps to capture the secular growth story of memory and storage. It aims to capitalize on the multi-decade buildout of data-intensive AI infrastructure by focusing strictly on companies generating the majority of their revenue from memory technologies.

• The Big Three HBM / DRAM Titans: Holds major exposure to Samsung Electronics, SK Hynix, and Micron Technology, which together dominate the global HBM (High Bandwidth Memory) and traditional DRAM markets.
• NAND Flash & Storage Giants: Includes Western Digital, SanDisk, Kioxia, and Seagate Technology to cover the entire flash and high-capacity storage value chain.
• Note: To ensure regulatory compliance and manage swap liquidity, the fund also holds allocations in short-term U.S. Treasury Bills and government money market instruments.

DRAM is an aggressive, thematic ETF designed for investors who want a direct proxy on the memory supercycle driven by artificial intelligence. While it offers explosive upside potential during memory pricing upcycles, the inherent volatility and cyclicality of the memory market make it more suitable as a tactical satellite position rather than a core portfolio holding.